No. |
Part Name |
Description |
Manufacturer |
1 |
GM71C17400CLJ-5 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
2 |
GM71C17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
3 |
GM71C17800CLJ-5 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
4 |
GM71CS17400CLJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power |
Hynix Semiconductor |
5 |
GM71CS17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
6 |
GM71CS17800CLJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
7 |
GM71CS18163CLJ-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
8 |
GM71V17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
9 |
GM71V18163CLJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
10 |
GM71VS17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
11 |
GM71VS18163CLJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
12 |
HM5117805LJ-5 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
13 |
HM5164165FLJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
14 |
HM5164165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
15 |
HM5164405FLJ-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
16 |
HM5165165FLJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
17 |
HM5165165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
18 |
HM5165405FLJ-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
19 |
HM51W16165LJ-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
20 |
HM51W18165LJ-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
21 |
HY51V17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
22 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
23 |
HY51V65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
24 |
HY51VS17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
25 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
26 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
27 |
HY534256ALJ-50 |
256K x 4-bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
28 |
HY62256ALJ-55 |
32Kx8bit CMOS SRAM, standby current=100uA, 55ns |
Hynix Semiconductor |
29 |
HY62256ALLJ-55 |
32Kx8bit CMOS SRAM, standby current=25uA, 55ns |
Hynix Semiconductor |
30 |
KM416C256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
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