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Datasheets for LJ-5

Datasheets found :: 37
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 GM71C17400CLJ-5 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Hynix Semiconductor
2 GM71C17403CLJ-5 CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power Hynix Semiconductor
3 GM71C17800CLJ-5 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Hynix Semiconductor
4 GM71CS17400CLJ-5 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power Hynix Semiconductor
5 GM71CS17403CLJ-5 CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power Hynix Semiconductor
6 GM71CS17800CLJ-5 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power Hynix Semiconductor
7 GM71CS18163CLJ-5 1,048,576 words x 16 bit CMOS DRAM, 50ns, low power Hynix Semiconductor
8 GM71V17403CLJ-5 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power Hynix Semiconductor
9 GM71V18163CLJ-5 1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns Hynix Semiconductor
10 GM71VS17403CLJ-5 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power Hynix Semiconductor
11 GM71VS18163CLJ-5 1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns Hynix Semiconductor
12 HM5117805LJ-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Elpida Memory
13 HM5164165FLJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh Hitachi Semiconductor
14 HM5164165LJ-5 64M EDO DRAM (4-Mword x 16-bit), 50ns Hitachi Semiconductor
15 HM5164405FLJ-5 16M x 4-bit EDO DRAM, 50ns Hitachi Semiconductor
16 HM5165165FLJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh Hitachi Semiconductor
17 HM5165165LJ-5 64M EDO DRAM (4-Mword x 16-bit), 50ns Hitachi Semiconductor
18 HM5165405FLJ-5 16M x 4-bit EDO DRAM, 50ns Hitachi Semiconductor
19 HM51W16165LJ-5 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh Hitachi Semiconductor
20 HM51W18165LJ-5 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh Hitachi Semiconductor
21 HY51V17403HGLJ-5 4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power Hynix Semiconductor
22 HY51V18163HGLJ-5 Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Hynix Semiconductor
23 HY51V65163HGLJ-5 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power Hynix Semiconductor
24 HY51VS17403HGLJ-5 4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power Hynix Semiconductor
25 HY51VS18163HGLJ-5 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power Hynix Semiconductor
26 HY51VS65163HGLJ-5 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power Hynix Semiconductor
27 HY534256ALJ-50 256K x 4-bit CMOS DRAM, 50ns, low power Hynix Semiconductor
28 HY62256ALJ-55 32Kx8bit CMOS SRAM, standby current=100uA, 55ns Hynix Semiconductor
29 HY62256ALLJ-55 32Kx8bit CMOS SRAM, standby current=25uA, 55ns Hynix Semiconductor
30 KM416C256DLJ-5 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability Samsung Electronic


Datasheets found :: 37
Page: | 1 | 2 |



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