No. |
Part Name |
Description |
Manufacturer |
1 |
GM71C17400CLJ-7 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
2 |
GM71C17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
3 |
GM71C17800CLJ-7 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
4 |
GM71CS17400CLJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power |
Hynix Semiconductor |
5 |
GM71CS17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
6 |
GM71CS17800CLJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
7 |
GM71CS18163ALJ-7 |
1,048,576 words x 16 bit DRAM, 70ns, low power |
LG Semiconductor |
8 |
GM71CS18163CLJ-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
9 |
GM71V17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
10 |
GM71V18163CLJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
11 |
GM71VS17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
12 |
GM71VS18163CLJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
13 |
HM514260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
14 |
HM514260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
15 |
HM514400ALJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
16 |
HM514400ASLJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
17 |
HM514800ALJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
18 |
HM514800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
19 |
HM51S4260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
20 |
HM51S4260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
21 |
HM51S4800ALJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
22 |
HM51S4800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
23 |
HM51W16165LJ-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
24 |
HM51W18165LJ-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
25 |
HY51V17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
26 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
27 |
HY51VS17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
28 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
29 |
HY534256ALJ-70 |
256K x 4-bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
30 |
HY62256ALJ-70 |
32Kx8bit CMOS SRAM, standby current=100uA, 70ns |
Hynix Semiconductor |
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