| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GM71CS18163ALJ-8 |
1,048,576 words x 16 bit DRAM, 80ns, low power |
LG Semiconductor |
| 2 |
HM514260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 3 |
HM514260CLJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 4 |
HM514400ALJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 5 |
HM514400ASLJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 6 |
HM514800ALJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 7 |
HM514800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 8 |
HM51S4260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9 |
HM51S4260CLJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 10 |
HM51S4800ALJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 11 |
HM51S4800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 12 |
HY534256ALJ-80 |
256K x 4-bit CMOS DRAM, 80ns, low power |
Hynix Semiconductor |
| 13 |
HY62256ALJ-85 |
32Kx8bit CMOS SRAM, standby current=100uA, 85ns |
Hynix Semiconductor |
| 14 |
HY62256ALLJ-85 |
32Kx8bit CMOS SRAM, standby current=25uA, 85ns |
Hynix Semiconductor |
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