| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1191 |
Ultra-Low-Power, 7.5Msps, Dual 8-Bit ADC |
MAXIM - Dallas Semiconductor |
| 2 |
28F002BL-B |
2-MBIT (128K x 16, 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 3 |
28F002BL-T |
2-MBIT (128K x 16, 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 4 |
28F004BL-B |
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 5 |
28F004BL-T |
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 6 |
28F200BL-B |
2-MBIT (128K x 16, 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 7 |
28F200BL-T |
2-MBIT (128K x 16, 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 8 |
28F200BL-TB |
2-MBIT (128K x 16 / 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 9 |
28F400BL-B |
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 10 |
28F400BL-T |
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 11 |
28F400BL-TB |
4-MBlT (256K x 16 / 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 12 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 13 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 14 |
2N2484 |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| 15 |
2N2484UA |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| 16 |
2N2484UB |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| 17 |
2N3010 |
NPN silicon low-power transistor |
Motorola |
| 18 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 19 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 20 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 21 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 22 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 23 |
2N5221 |
Low-Power General purpose PNP silicon amplifier transistor |
ITT Semiconductors |
| 24 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 25 |
2SC5288 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 26 |
2SC5288-T1 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 27 |
2SC5289 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 28 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
| 29 |
3N139 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 30 |
3N159 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
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