No. |
Part Name |
Description |
Manufacturer |
1 |
BQ24010 |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present and Temp. Sense in QFN/MLP-10 |
Texas Instruments |
2 |
BQ24010DRCR |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present and Temp. Sense in QFN/MLP-10 |
Texas Instruments |
3 |
BQ24010DRCRG4 |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present and Temp. Sense in QFN/MLP-10 |
Texas Instruments |
4 |
BQ24012 |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present & Charge Enable in QFN/MLP-10 |
Texas Instruments |
5 |
BQ24012DRCR |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present & Charge Enable in QFN/MLP-10 |
Texas Instruments |
6 |
BQ24012DRCRG4 |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present & Charge Enable in QFN/MLP-10 |
Texas Instruments |
7 |
BQ24013 |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, Charge & Term Enable in QFN/MLP-10 |
Texas Instruments |
8 |
BQ24013DRCR |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, Charge & Term Enable in QFN/MLP-10 |
Texas Instruments |
9 |
BQ24013DRCRG4 |
bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, Charge & Term Enable in QFN/MLP-10 |
Texas Instruments |
10 |
HM62256ALP-10 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
11 |
HM62256ALP-10SL |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
12 |
HM6264ALP-10 |
8192-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
13 |
HM6264ALP-10L |
8192-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
14 |
HM6264BLP-10L |
64 k SRAM (8-kword x 8-bit) |
Hitachi Semiconductor |
15 |
HM6264LP-10 |
8192-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
16 |
HM6264LP-10L |
8192-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
17 |
HM628128ALP-10 |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
18 |
HM628128ALP-10 |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
19 |
HM628128ALP-10L |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
20 |
HM628128ALP-10L |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
21 |
HM628128ALP-10SL |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
22 |
HM628128ALP-10SL |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
23 |
HM628128LP-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
24 |
HM628128LP-10SL |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
25 |
HM658512ALP-10 |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
26 |
HM658512ALP-10V |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
27 |
HM9264BLP-10L |
64 k SRAM (8-kword x 8-bit) |
Hitachi Semiconductor |
28 |
HY6264LP-10 |
8K x 8-bit CMOS SRAM, 100ns |
Hynix Semiconductor |
29 |
KM6264BLP-10 |
8Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
30 |
KM6264BLP-10L |
8Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
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