No. |
Part Name |
Description |
Manufacturer |
1 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
2 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
3 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
4 |
HM514400ALRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
5 |
HM514400ALRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
6 |
HM514400ALRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
7 |
HM514400ASLRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
8 |
HM514400ASLRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
9 |
HM514400ASLRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
10 |
HM514800ALRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
11 |
HM514800ALRR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
12 |
HM514800LRR-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
13 |
HM514800LRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
14 |
HM514800LRR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
15 |
HM51S4260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
16 |
HM51S4260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
17 |
HM51S4260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
18 |
HM51S4800ALRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
19 |
HM51S4800ALRR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
20 |
HM628512ALRR-5 |
4M SRAM (512 KWORD X 8 BIT) |
Hitachi Semiconductor |
21 |
HM628512ALRR-5SL |
4M SRAM (512 KWORD X 8 BIT) |
Hitachi Semiconductor |
22 |
HM628512ALRR-7 |
4M SRAM (512 KWORD X 8 BIT) |
Hitachi Semiconductor |
23 |
HM628512ALRR-7SL |
4M SRAM (512 KWORD X 8 BIT) |
Hitachi Semiconductor |
24 |
HM628512ALRRI |
524288-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
25 |
HM628512ALRRI-7 |
524288-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
26 |
HM628512ALRRI-8 |
524288-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
27 |
HM628512BLRR-5 |
4 M SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
28 |
HM628512BLRR-5SL |
4 M SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
29 |
HM628512BLRR-5UL |
4 M SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
30 |
HM628512BLRR-7 |
4 M SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
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