| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N277 |
110 Volt Germanium Diode |
Micro Commercial Components |
| 2 |
1N34 |
65 Volt Germanium Diode |
Micro Commercial Components |
| 3 |
1N34A |
65 Volt Germanium Diode |
Micro Commercial Components |
| 4 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 5 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 6 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 7 |
IRF6618TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 8 |
IRF6678TR1 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 9 |
IRF6678TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 10 |
IRF6678TRPBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 11 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 12 |
PB-IRF6609 |
Leaded A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13 |
PB-IRF6613 |
Leaded A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 14 |
PB-IRF6618 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 15 |
PB-IRF6678 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 16 |
QPD1008 |
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor |
Qorvo |
| 17 |
QPD1008L |
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor |
Qorvo |
| 18 |
QPD3601 |
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor |
Qorvo |
| 19 |
RF5110G |
150 - 960 MHz, 3 Volt General Purpose / Power Amplifier |
Qorvo |
| 20 |
SW-395 |
3 Volt GaAs SPDT Switch DC - 2.0 GHz |
Tyco Electronics |
| 21 |
SW-395PIN |
3 Volt GaAs SPDT Switch DC - 2.0 GHz |
Tyco Electronics |
| 22 |
SW-395TR |
3 Volt GaAs SPDT Switch DC - 2.0 GHz |
Tyco Electronics |
| | | |
