No. |
Part Name |
Description |
Manufacturer |
1 |
BC856ALT-1 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
2 |
DMN33D8LT-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
3 |
DMN53D0LT-13 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
4 |
GM72V66841CLT-10K |
2097152 word x 8 bit x 4 bank synchronous dynamic RAM |
LG Semiconductor |
5 |
GM72V66841ELT-10K |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
Hynix Semiconductor |
6 |
HM62256ALT-10 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
7 |
HM62256ALT-10SL |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
8 |
HM62256ALT-12 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
9 |
HM62256ALT-12SL |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
10 |
HM62256ALT-15 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
11 |
HM62256ALT-15SL |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
12 |
HM628128ALT-10 |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
13 |
HM628128ALT-10 |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
14 |
HM628128ALT-10L |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
15 |
HM628128ALT-10L |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
16 |
HM628128ALT-10SL |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
17 |
HM628128LT-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
18 |
HM628128LT-10L |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
19 |
HM628128LT-10SL |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
20 |
HM628128LT-12 |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
21 |
HM628128LT-12L |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
22 |
HM628128LT-12SL |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
23 |
HM62V256LT-10 |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
24 |
KM681002CLT-10 |
128K x 8 high speed static RAM, 5V operating, 10ns, low power |
Samsung Electronic |
25 |
KM681002CLT-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
26 |
KM681002CLT-15 |
128K x 8 high speed static RAM, 5V operating, 15ns, low power |
Samsung Electronic |
27 |
KM684000LT-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
28 |
KM684000LT-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
29 |
KM68U1000BLT-10 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
30 |
KM68U1000BLT-10L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
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