No. |
Part Name |
Description |
Manufacturer |
1 |
GM71C17400CLT-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
2 |
GM71C17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
3 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
4 |
GM71CS17400CLT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
5 |
GM71CS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
6 |
GM71CS17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
7 |
GM71CS18163ALT-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
8 |
GM71CS18163CLT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
9 |
GM71V17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
10 |
GM71VS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
11 |
HM514400ALT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
12 |
HM514400ASLT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
13 |
HY51V17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
14 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
15 |
HY51V65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
16 |
HY51VS17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
17 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
18 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
19 |
HY57V281620ALT-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
20 |
HY57V281620ELT-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
21 |
HY57V281620HCLT-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
22 |
HY57V281620HCLT-6I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
23 |
HY57V641620HGLT-6 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz |
Hynix Semiconductor |
24 |
HY57V641620HGLT-6I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz |
Hynix Semiconductor |
25 |
HY57V643220CLT-6 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
26 |
HY57V64820HGLT-6 |
4 Banks x 2M x 8Bit Synchronous DRAM |
Hynix Semiconductor |
27 |
KM416C256DLT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
28 |
KM416V256DLT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
29 |
KM41C4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
30 |
KM41V4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
| | | |