No. |
Part Name |
Description |
Manufacturer |
1 |
GL360 |
3.2mm RESIN MOLD Type Infrared Light Emltting Diode |
SHARP |
2 |
H21A4 |
SOLTTED OPTICAL SWITCH |
QT Optoelectronics |
3 |
H21A5 |
SOLTTED OPTICAL SWITCH |
QT Optoelectronics |
4 |
H21A6 |
SOLTTED OPTICAL SWITCH |
QT Optoelectronics |
5 |
HM5117805LTT-5 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
6 |
HM5117805LTT-6 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
7 |
HM5117805LTT-7 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
8 |
HM514260ALTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
9 |
HM514260ALTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
10 |
HM514260ALTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
11 |
HM514260CLTT-6 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
12 |
HM514260CLTT-6R |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
13 |
HM514260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
14 |
HM514260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
15 |
HM514260LTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
16 |
HM514260LTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
17 |
HM514260LTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
18 |
HM514400ALTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
19 |
HM514400ALTT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
20 |
HM514400ALTT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
21 |
HM514400ASLTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
22 |
HM514400ASLTT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
23 |
HM514400ASLTT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
24 |
HM514400BLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
25 |
HM514400BLTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
26 |
HM514400BLTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
27 |
HM514400CLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
28 |
HM514400CLTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
29 |
HM514400CLTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
30 |
HM514800ALTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| | | |