No. |
Part Name |
Description |
Manufacturer |
1 |
28LV256PI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
2 |
28LV256PI-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
3 |
28LV256PI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
4 |
28LV256PI-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
5 |
28LV256PI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
6 |
28LV256PI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
7 |
28LV256PI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
8 |
28LV256PI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
9 |
BS62LV256PI |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit |
Brilliance Semiconductor |
10 |
CAT28LV256PI-20T |
256K-bit CMOS parallel EEPROM 200ns |
Catalyst Semiconductor |
11 |
CAT28LV256PI-25T |
256K-bit CMOS parallel EEPROM 250ns |
Catalyst Semiconductor |
12 |
CAT28LV256PI-30T |
256K-bit CMOS parallel EEPROM 300ns |
Catalyst Semiconductor |
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