| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM514260ALZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 2 |
HM514400ALZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 3 |
HM514400ASLZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 4 |
HM514400BLZ-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 5 |
HM514400CLZ-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 6 |
HM514800ALZ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 7 |
HM51S4260ALZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| | | |
