No. |
Part Name |
Description |
Manufacturer |
1 |
1N5546 |
Nom zener voltage:33.0V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage |
Knox Semiconductor Inc |
2 |
BAX280 |
FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics) |
Siemens |
3 |
BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) |
Siemens |
4 |
BYW51-100 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 100V. |
General Electric Solid State |
5 |
C106A |
4A sensitive-gate silicon controlled rectifier. Vrrm 100V. |
General Electric Solid State |
6 |
C122A |
8A silicon controlled rectifier. Vrrom 100V. |
General Electric Solid State |
7 |
C3013 |
CMOS 3mm 10 Volt Single Metal Analog |
IMP Inc |
8 |
C3025 |
Process C3025 CMOS 3Um 10 Volt Analog |
IMP Inc |
9 |
CSD95379Q3M |
Synchronous Buck NexFET Power Stage, CSD95379Q3M 10-VSON-CLIP |
Texas Instruments |
10 |
CSD95379Q3MT |
Synchronous Buck NexFET Power Stage, CSD95379Q3M 10-VSON-CLIP |
Texas Instruments |
11 |
DRV2603RUNR |
Haptic Driver with Auto Resonance Tracking for LRA and Optimized Drive for ERM 10-QFN -40 to 85 |
Texas Instruments |
12 |
DRV2603RUNT |
Haptic Driver with Auto Resonance Tracking for LRA and Optimized Drive for ERM 10-QFN -40 to 85 |
Texas Instruments |
13 |
ECM168 |
PHS +34 dBm 10V Module |
WJ Communications |
14 |
ECM168-PCB |
PHS +34 dBm 10V Module |
WJ Communications |
15 |
HM5212325F |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
16 |
HM5212325F-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
17 |
HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank |
Hitachi Semiconductor |
18 |
HM5212325FBPC |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
19 |
HM5212325FBPC-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
20 |
HM5225325F-B60 |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
21 |
HM5225645F |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
22 |
HM5225645F-B60 |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
23 |
K214 |
Nom zener voltage:2.4V; 250mW; measured from 1000-3000Hz; low level zener diode, very low voltage, low leakage |
Knox Semiconductor Inc |
24 |
M330 |
RAM 1024x1 bit static |
SGS-ATES |
25 |
M330A |
RAM 1024x1 bit static |
SGS-ATES |
26 |
M38747M4T |
Single-chip 8-bit CMOS microcomputer. ROM 16384 bytes, RAM 1048 bytes. Mask ROM version. |
Mitsubishi Electric Corporation |
27 |
M38747M6T |
Single-chip 8-bit CMOS microcomputer. ROM 49152 bytes, RAM 1048 bytes. Mask ROM version. |
Mitsubishi Electric Corporation |
28 |
M38749MCT |
Single-chip 8-bit CMOS microcomputer. ROM 49152 bytes, RAM 1048 bytes. Mask ROM version. |
Mitsubishi Electric Corporation |
29 |
MAX8524 |
2- to 8-Phase VRM 10/9.1 PWM Controllers with Precise Current Sharing and Fast Voltage Positioning |
MAXIM - Dallas Semiconductor |
30 |
MAX8525 |
2- to 8-Phase VRM 10/9.1 PWM Controllers with Precise Current Sharing and Fast Voltage Positioning |
MAXIM - Dallas Semiconductor |
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