| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5546 |
Nom zener voltage:33.0V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage |
Knox Semiconductor Inc |
| 2 |
BAX280 |
FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics) |
Siemens |
| 3 |
BYW51-100 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 100V. |
General Electric Solid State |
| 4 |
C106A |
4A sensitive-gate silicon controlled rectifier. Vrrm 100V. |
General Electric Solid State |
| 5 |
C122A |
8A silicon controlled rectifier. Vrrom 100V. |
General Electric Solid State |
| 6 |
HM5212325F |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 7 |
HM5212325F-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 8 |
HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank |
Hitachi Semiconductor |
| 9 |
HM5212325FBPC |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 10 |
HM5212325FBPC-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 11 |
HM5225325F-B60 |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 12 |
HM5225645F |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 13 |
HM5225645F-B60 |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 14 |
K214 |
Nom zener voltage:2.4V; 250mW; measured from 1000-3000Hz; low level zener diode, very low voltage, low leakage |
Knox Semiconductor Inc |
| 15 |
MLO80100-01020 |
Surface Mount Voltage Controlled Oscillator EGSM 1000 - 1040 MHz |
Tyco Electronics |
| 16 |
MSP432P401MIPZ |
Low-Power + High Performance 32-Bit ARM Cortex M4F With 128KB Flash and 32KB RAM 100-LQFP -40 to 85 |
Texas Instruments |
| 17 |
MSP432P401MIPZR |
Low-Power + High Performance 32-Bit ARM Cortex M4F With 128KB Flash and 32KB RAM 100-LQFP -40 to 85 |
Texas Instruments |
| 18 |
MSP432P401R |
Low-Power and High Performance 32-Bit ARM Cortex M4F With 256KB Flash and 64KB RAM 100-LQFP -40 to 85 |
Texas Instruments |
| 19 |
MSP432P401RIPZR |
Low-Power and High Performance 32-Bit ARM Cortex M4F With 256KB Flash and 64KB RAM 100-LQFP -40 to 85 |
Texas Instruments |
| 20 |
RUR-D1610 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 100V. |
General Electric Solid State |
| 21 |
RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V. |
General Electric Solid State |
| 22 |
S2800A |
10A silicon controlled rectifier. Vdrm, Vrrm 100V. |
General Electric Solid State |
| 23 |
STB100NF04L |
N-CHANNEL 40V 0.0036 OHM 100A D2PAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 24 |
STB100NF04L |
N-CHANNEL 40V 0.0036 OHM 100A D2PAK STRIPFET II POWER MOSFET |
ST Microelectronics |
| 25 |
STB100NF04L-1 |
N-CHANNEL 40V 0.0036 OHM 100A D2PAK/I2PAK STRIPFET II POWER MOSFET |
ST Microelectronics |
| 26 |
STB100NF04LT4 |
N-CHANNEL 40V 0.0036 OHM 100A D2PAK/I2PAK STRIPFET II POWER MOSFET |
ST Microelectronics |
| 27 |
STP100NF04L |
N-CHANNEL 40V 0.0036 OHM 100A TO-220 STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 28 |
STP100NF04L |
N-CHANNEL 40V 0.0036 OHM 100A TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 29 |
STY100NS20FD |
N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 30 |
STY100NS20FD |
N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET |
ST Microelectronics |
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