| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM5212325F |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 2 |
HM5212325F-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 3 |
HM5212325FBPC |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 4 |
HM5212325FBPC-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 5 |
HM5225325F-B60 |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 6 |
HM5225645F |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 7 |
HM5225645F-B60 |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
| 8 |
RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V. |
General Electric Solid State |
| 9 |
T2300A |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V. |
General Electric Solid State |
| 10 |
T2301A |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 100 V. |
General Electric Solid State |
| 11 |
T2302A |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 100 V. |
General Electric Solid State |
| 12 |
T2800A |
High voltage, 8-A silicon triac. Vdrom 100 V. |
General Electric Solid State |
| 13 |
T2802A |
High voltage, 8-A silicon triac. Vdrom 100 V. |
General Electric Solid State |
| | | |
