No. |
Part Name |
Description |
Manufacturer |
1 |
HM5212325F |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
2 |
HM5212325F-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
3 |
HM5212325FBPC |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
4 |
HM5212325FBPC-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
5 |
HM5225325F-B60 |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
6 |
HM5225645F |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
7 |
HM5225645F-B60 |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM |
Hitachi Semiconductor |
8 |
RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V. |
General Electric Solid State |
9 |
T2300A |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V. |
General Electric Solid State |
10 |
T2301A |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 100 V. |
General Electric Solid State |
11 |
T2302A |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 100 V. |
General Electric Solid State |
12 |
T2800A |
High voltage, 8-A silicon triac. Vdrom 100 V. |
General Electric Solid State |
13 |
T2802A |
High voltage, 8-A silicon triac. Vdrom 100 V. |
General Electric Solid State |
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