No. |
Part Name |
Description |
Manufacturer |
1 |
2N3652 |
35A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
2 |
2N687 |
25A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
3 |
C106D |
4A sensitive-gate silicon controlled rectifier. Vrrm 400V. |
General Electric Solid State |
4 |
C122D |
8A silicon controlled rectifier. Vrrom 400V. |
General Electric Solid State |
5 |
CLY10 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
6 |
CLY15 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
7 |
CLY5 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
8 |
IRU3037ACF |
8 PWM 400 KHz Sync Contr in a 8-Pin TSSOP package |
International Rectifier |
9 |
IRU3037ACFPBF |
8 PWM 400 KHz Sync Contr in a 8-Pin TSSOP package |
International Rectifier |
10 |
IRU3037ACFTR |
8 PWM 400 KHz Sync Contr in a 8-Pin TSSOP package |
International Rectifier |
11 |
IRU3037ACFTRPBF |
8 PWM 400 KHz Sync Contr in a 8-Pin TSSOP package |
International Rectifier |
12 |
IRU3037ACS |
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package |
International Rectifier |
13 |
IRU3037ACSPBF |
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package |
International Rectifier |
14 |
IRU3037ACSTR |
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package |
International Rectifier |
15 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
16 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
17 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
18 |
S2060C |
4A sensitive-gate silicon controlled rectifier. Vrsxm 400V. |
General Electric Solid State |
19 |
S2061C |
4A sensitive-gate silicon controlled rectifier. Vrsxm 400V. |
General Electric Solid State |
20 |
S2600D |
High voltage, medium current silicon controlled rectifier. Vdrm 400V. |
General Electric Solid State |
21 |
S2700D |
High voltage, medium current silicon controlled rectifier. Vdrm 400V. |
General Electric Solid State |
22 |
S2800D |
10A silicon controlled rectifier. Vdrm, Vrrm 400V. |
General Electric Solid State |
23 |
T2300D |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. |
General Electric Solid State |
24 |
T2301D |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V. |
General Electric Solid State |
25 |
T2302D |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 400 V. |
General Electric Solid State |
26 |
T2500D |
High voltage, 6-A silicon triac. Vdrm 400 V. |
General Electric Solid State |
27 |
T2800D |
High voltage, 8-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
28 |
T2802D |
High voltage, 8-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
29 |
T6000D |
16-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
30 |
T6001D |
16-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
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