| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 2 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 3 |
BFQ75 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) |
Siemens |
| 4 |
BFR93AW |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 5 |
C3014 |
CMOS 3mm 5 Volt Single Metal Analog |
IMP Inc |
| 6 |
HYB5116400BT-50 |
4M x 4 Bit FPM DRAM 5 V 4k 50ns |
Infineon |
| 7 |
HYB5116400BT-60 |
4M x 4 Bit FPM DRAM 5 V 4k 60ns |
Infineon |
| 8 |
HYB514100BJ-50 |
4M x 1 Bit FPM DRAM 5 V 50 ns |
Infineon |
| 9 |
HYB514100BJ-60 |
4M x 1 Bit FPM DRAM 5 V 60 ns |
Infineon |
| 10 |
HYB514171BJ-50 |
256k x 16 Bit FPM DRAM 5 V 50 ns |
Infineon |
| 11 |
HYB514171BJ-60 |
256k x 16 Bit FPM DRAM 5 V 60 ns |
Infineon |
| 12 |
HYB514175BJ-50 |
256k x 16 Bit EDO DRAM 5 V 50 ns |
Infineon |
| 13 |
HYB514175BJ-55 |
256k x 16 Bit EDO DRAM 5 V 55 ns |
Infineon |
| 14 |
HYB514175BJ-60 |
256k x 16 Bit EDO DRAM 5 V 60 ns |
Infineon |
| 15 |
HYB514400BJ-50 |
1M x 4 Bit FPM DRAM 5 V 50 ns |
Infineon |
| 16 |
HYB514400BJ-60 |
1M x 4 Bit FPM DRAM 5 V 60 ns |
Infineon |
| 17 |
HYB514405BJ-50 |
1M x 4 Bit EDO DRAM 5 V 50 ns |
Infineon |
| 18 |
HYB514405BJ-60 |
1M x 4 Bit EDO DRAM 5 V 60 ns |
Infineon |
| 19 |
HYB514405BJ-70 |
1M x 4 Bit EDO DRAM 5 V 70 ns |
Infineon |
| 20 |
KC1850 |
C-values 220 pF - 0.01 µF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5 |
Vishay |
| 21 |
KP1830 |
C-values 100 pF - 0.033 µF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
| 22 |
MKC 1858 |
C-values 0.01 µF - 0.33 µF, Voltage 63 - 100 VDC, Flat and linear TC, PCM 5 |
Vishay |
| 23 |
MKP 1837 |
C-values 0.01 µF - 0.1 µF, Voltage 160 VDC, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
| 24 |
MKT 1826 |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked film, PCM 5 |
Vishay |
| 25 |
PCU9654PW |
8-bit UFm 5 MHz I²C-bus 100 mA 40 V LED driver |
NXP Semiconductors |
| 26 |
PCU9655PW |
16-channel UFm 5 MHz bus 100 mA 40 V LED driver |
NXP Semiconductors |
| 27 |
PCU9655PW1 |
16-channel UFm 5 MHz bus 100 mA 40 V LED driver |
NXP Semiconductors |
| 28 |
PCU9656B |
24-bit UFm 5 MHz I²C-bus 100 mA 40 V LED driver |
NXP Semiconductors |
| 29 |
PCU9955ATW |
16-channel UFm 5 MHz I2C-bus 57 mA/20 V constant current LED driver |
NXP Semiconductors |
| 30 |
PCU9956ATW |
24-channel UFm 5 MHz I2C-bus 57 mA/20 V constant current LED driver |
NXP Semiconductors |
| | | |
