No. |
Part Name |
Description |
Manufacturer |
1 |
2N3653 |
35A silicon controlled rectifier. Vrsom 500V. |
General Electric Solid State |
2 |
2N688 |
25A silicon controlled rectifier. Vrsom 500V. |
General Electric Solid State |
3 |
AD5535 |
32-Channel, 14-Bit DAC with Fullscale Output Voltage Programmable from 50 V to 200 V |
Analog Devices |
4 |
AD5535B |
32-Channel, 14-Bit DAC with Full-Scale Output Voltage Programmable from 50 V to 200 V |
Analog Devices |
5 |
ADN2847 |
Anyrate from 50 Mbps to 3.3 Gbps, Dual-loop Control Laser Diode Driver IC |
Analog Devices |
6 |
BULLETIN 257H (5000) |
System 5000 Hardware Specifications |
Vishay |
7 |
C106E |
4A sensitive-gate silicon controlled rectifier. Vrrm 500V. |
General Electric Solid State |
8 |
C106F |
4A sensitive-gate silicon controlled rectifier. Vrrm 50V. |
General Electric Solid State |
9 |
C122E |
8A silicon controlled rectifier. Vrrom 500V. |
General Electric Solid State |
10 |
C122F |
8A silicon controlled rectifier. Vrrom 50V. |
General Electric Solid State |
11 |
ISL9V5036P3 |
EcoSPARK TM 500mJ, 360V, N-Channel Ignition IGBT |
Fairchild Semiconductor |
12 |
ISL9V5036S3S |
EcoSPARK TM 500mJ, 360V, N-Channel Ignition IGBT |
Fairchild Semiconductor |
13 |
MAV-11A |
MAV-11A Monolithic Amplifier 50OHM 50 to 2000 MHz |
Mini-Circuits |
14 |
S2060D |
4A sensitive-gate silicon controlled rectifier. Vrsxm 500V. |
General Electric Solid State |
15 |
S2060Y |
4A sensitive-gate silicon controlled rectifier. Vrsxm 50V. |
General Electric Solid State |
16 |
S2061D |
4A sensitive-gate silicon controlled rectifier. Vrsxm 500V. |
General Electric Solid State |
17 |
S2061Y |
4A sensitive-gate silicon controlled rectifier. Vrsxm 50V. |
General Electric Solid State |
18 |
S2800E |
10A silicon controlled rectifier. Vdrm, Vrrm 500V. |
General Electric Solid State |
19 |
S2800F |
10A silicon controlled rectifier. Vdrm, Vrrm 50V. |
General Electric Solid State |
20 |
SF-SM50 |
Adapters / SMA-F to SMA-M 50W / DC to 18 GHz |
Mini-Circuits |
21 |
SM-SM50 |
Adapter/ SMA-M to SMA-M 50W DC to 18 GHz |
Mini-Circuits |
22 |
STB55NF06 |
N-CHANNEL 60V 0.018 OHM 50A D2PAK STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
23 |
STB55NF06 |
N-CHANNEL 60V 0.018 OHM 50A D2PAK STRIPFET POWER MOSFET |
ST Microelectronics |
24 |
STB55NF06-1 |
N-CHANNEL 60V 0.017 OHM 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
25 |
STP55NF06 |
N-CHANNEL 60V 0.017 OHM 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
26 |
STP55NF06FP |
N-CHANNEL 60V 0.017 OHM 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
27 |
T2300F |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V. |
General Electric Solid State |
28 |
T2301F |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 50 V. |
General Electric Solid State |
29 |
T2302F |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 50 V. |
General Electric Solid State |
30 |
T2800E |
High voltage, 8-A silicon triac. Vdrom 500 V. |
General Electric Solid State |
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