| No. |
Part Name |
Description |
Manufacturer |
| 1 |
C106N |
4A sensitive-gate silicon controlled rectifier. Vrrm 800V. |
General Electric Solid State |
| 2 |
MHL9236 |
MHL9236, MHL9236M 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers |
Motorola |
| 3 |
S2600N |
High voltage, medium current silicon controlled rectifier. Vdrm 800V. |
General Electric Solid State |
| 4 |
S2700N |
High voltage, medium current silicon controlled rectifier. Vdrm 800V. |
General Electric Solid State |
| 5 |
S2800N |
10A silicon controlled rectifier. Vdrm, Vrrm 800V. |
General Electric Solid State |
| 6 |
T2300N |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V. |
General Electric Solid State |
| 7 |
T2301N |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 800 V. |
General Electric Solid State |
| 8 |
T2302N |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 800 V. |
General Electric Solid State |
| 9 |
T2500N |
High voltage, 6-A silicon triac. Vdrm 800 V. |
General Electric Solid State |
| 10 |
T2800N |
High voltage, 8-A silicon triac. Vdrom 800 V. |
General Electric Solid State |
| 11 |
T2802N |
High voltage, 8-A silicon triac. Vdrom 800 V. |
General Electric Solid State |
| 12 |
T6000N |
16-A silicon triac. Vdrom 800 V. |
General Electric Solid State |
| 13 |
T6001N |
16-A silicon triac. Vdrom 800 V. |
General Electric Solid State |
| 14 |
T6006N |
16-A silicon triac. Vdrom 800 V. |
General Electric Solid State |
| | | |
