| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1215 |
Miniature Selenium Diode |
ITT Semiconductors |
| 2 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 3 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 4 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 5 |
12CE673 |
8-Pin/ 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory |
Microchip |
| 6 |
12F629 |
8-Pin, 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory |
Microchip |
| 7 |
1989-XX |
Tanfilm DIP Resistor Networks |
International Resistive |
| 8 |
1N100 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 9 |
1N100 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 10 |
1N100 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 11 |
1N100A |
100 V, 250 mA, gold bonded germanium diode |
BKC International Electronics |
| 12 |
1N100A |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 13 |
1N100A |
Germanium Diode |
Microsemi |
| 14 |
1N102 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 15 |
1N102 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 16 |
1N103 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 17 |
1N103 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 18 |
1N104 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 19 |
1N104 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 20 |
1N107 |
10 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 21 |
1N107 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 22 |
1N108 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 23 |
1N108 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 24 |
1N110 |
Germanium Diode Microwave Mixer - to 1,000MHz, NF=10dB |
Motorola |
| 25 |
1N111 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 26 |
1N111 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 27 |
1N112 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 28 |
1N112 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 29 |
1N113 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 30 |
1N113 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| | | |
