| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 2 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 3 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 4 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 5 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 6 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 7 |
2N1305 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 8 |
2N1307 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 9 |
2N1309 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 10 |
2N3010 |
NPN High Current General Purpose Medium Speed Amplifiers |
Semicoa Semiconductor |
| 11 |
2N397 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 12 |
2N404 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 13 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 14 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 15 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 16 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 17 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 18 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 19 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 20 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 21 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 22 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 23 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 24 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 25 |
2SB765 |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
| 26 |
2SB765K |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
| 27 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 28 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 29 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 30 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
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