| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ADP3333ARM-18 |
High Accuracy Ultralow IQ, 300 mA, anyCAP Low Dropout Regulator |
Analog Devices |
| 2 |
ADP3335ARM-18 |
High Accuracy Ultralow IQ, 500 mA anyCAP Low Dropout Regulator |
Analog Devices |
| 3 |
AM-180PIN |
10-2000 MHz, 10 dB gain, cascadable thin film amplifier |
MA-Com |
| 4 |
AM-180PIN |
Cascadable Thin Film Amplifier, 10 dB Gain, 10 - 2000 MHz |
Tyco Electronics |
| 5 |
AM-182PIN |
5-1000 MHz, 28 dB gain, cascadable thin film amplifier |
MA-Com |
| 6 |
AM-182PIN |
Cascadable Thin Film Amplifier, 28 dB Gain, 5 - 1000 MHz |
Tyco Electronics |
| 7 |
AM-183PIN |
10-1000 MHz, 28.5 dB gain, cascadable thin film amplifier |
MA-Com |
| 8 |
AM-183PIN |
Cascadable Thin Film Amplifier, 28.5 dB Gain, 10 - 1000 MHz |
Tyco Electronics |
| 9 |
AM-184PIN |
10-2000 MHz, 20 dB gain, cascadable thin film amplifier |
MA-Com |
| 10 |
AM-184PIN |
Cascadable Thin Film Amplifier, 20 dB Gain, 10 - 2000 MHz |
Tyco Electronics |
| 11 |
AMS317ACM-18 |
1A LOW DROPOUT VOLTAGE REGULATOR |
Advanced Monolithic Systems |
| 12 |
AMS317CM-18 |
1A LOW DROPOUT VOLTAGE REGULATOR |
Advanced Monolithic Systems |
| 13 |
BCR8PM-18 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 14 |
BR211SM-180 |
Breakover diodes |
Philips |
| 15 |
CM-1829 |
P.C.B Circuit Diagram |
Samsung Electronic |
| 16 |
CT60AM-18B |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 17 |
CT60AM-18B |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE |
Mitsubishi Electric Corporation |
| 18 |
CT60AM-18C |
Transistors>IGBT>for Micro wave oven use |
Renesas |
| 19 |
CT60AM-18C-AD |
Insulated Gate Bipolar Transistor |
Renesas |
| 20 |
CT60AM-18F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 21 |
CT60AM-18F |
INSULATED GATE BIPOLAR TRANSISTOR |
Powerex Power Semiconductors |
| 22 |
CT60AM-18F |
Transistors>IGBT>for Micro wave oven use |
Renesas |
| 23 |
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 24 |
DBM-182 |
LOW LEVEL SUBVINIATURE FLATPACK DOUBLE BALANCED MIXER 600~2000 MHz |
Sirenza Microdevices |
| 25 |
FS10SM-18A |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 26 |
FS10SM-18A |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 27 |
FS14SM-18A |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 28 |
FS14SM-18A |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 29 |
FS1KM-18A |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 30 |
FS1KM-18A |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| | | |
