No. |
Part Name |
Description |
Manufacturer |
1 |
3D3215M-8 |
Delay 8 +/-1.4 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
2 |
3D7105M-8 |
Delay 8 +/-1.5 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
3 |
3D7205M-8 |
Delay 8 +/-1.5 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
4 |
4E100M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
5 |
4E200M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
6 |
4E20M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
7 |
4E30M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
8 |
4E40M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
9 |
4E50M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
10 |
4E80M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
11 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
12 |
BCR10CM-8 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
13 |
BCR10CM-8L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
14 |
BCR10PM-8 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
15 |
BCR10PM-8L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
16 |
BCR12CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
17 |
BCR12CM-8 |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
18 |
BCR12CM-8L |
Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
19 |
BCR12PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
20 |
BCR12PM-8 |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
21 |
BCR12PM-8L |
Isolated Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
22 |
BCR16CM-8 |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
23 |
BCR16CM-8L |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
24 |
BCR16PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
25 |
BCR16PM-8 |
Isolated Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
26 |
BCR16PM-8L |
Isolated Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
27 |
BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
28 |
BCR1AM-8 |
Lead-Mount Triac 1 Ampere/400-600 Volts |
Powerex Power Semiconductors |
29 |
BCR20AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
30 |
BCR20AM-8 |
Triac 20 Ampere/400-600 Volts |
Powerex Power Semiconductors |
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