No. |
Part Name |
Description |
Manufacturer |
1 |
1N4001 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
2 |
1N4002 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
3 |
1N4003 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
4 |
1N4004 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
5 |
1N4005 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
6 |
1N4006 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
7 |
1N4007 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
8 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
9 |
1V014 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 22 V @ 1mA DC test current. |
NTE Electronics |
10 |
1V015 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
11 |
1V017 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 27 V @ 1mA DC test current. |
NTE Electronics |
12 |
1V020 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 33 V @ 1mA DC test current. |
NTE Electronics |
13 |
1V025 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 39 V @ 1mA DC test current. |
NTE Electronics |
14 |
1V030 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 47 V @ 1mA DC test current. |
NTE Electronics |
15 |
1V035 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 56 V @ 1mA DC test current. |
NTE Electronics |
16 |
1V040 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 68 V @ 1mA DC test current. |
NTE Electronics |
17 |
1V050 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 82 V @ 1mA DC test current. |
NTE Electronics |
18 |
1V060 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 100 V @ 1mA DC test current. |
NTE Electronics |
19 |
1V075 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 120 V @ 1mA DC test current. |
NTE Electronics |
20 |
1V095 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
21 |
1V115 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
22 |
1V130 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
23 |
1V150 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
24 |
1V175 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 270 V @ 1mA DC test current. |
NTE Electronics |
25 |
1V250 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
26 |
1V275 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
27 |
1V300 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
28 |
24C04A |
The 24C04A is a 4K bit Serial Electrically Erasable PROM. The 24C04A features an I2C compatible 2-wire serial interface bus and hardware write protection for the upper half of the block. The 24C04A has a page write capabil |
Microchip |
29 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
30 |
24LC22A-I/P |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
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