| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0,5RM200 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 2 |
1/4M200Z |
Zener Diode 1/4W 200V |
Motorola |
| 3 |
1/4M20Z |
Zener Diode 1/4W 20V |
Motorola |
| 4 |
10AM20 |
CW Class A/AB ≤ 1 Ghz |
Microsemi |
| 5 |
10AM20 |
TRANS GP BJT 50V 5.5A 3(55AT) |
New Jersey Semiconductor |
| 6 |
10RM200 |
High Voltage silicon rectifier 20kV |
SESCOSEM |
| 7 |
1B100M20 |
10A 200V Single phase rectifier bridge |
Texas Instruments |
| 8 |
1M200Z |
Zener: |
Taiwan Semiconductor |
| 9 |
1M200Z |
200 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 10 |
1M200Z |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 11 |
1M200ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 12 |
1M200ZS1 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 1% tolerance. |
Motorola |
| 13 |
1M200ZS10 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 14 |
1M200ZS10 |
1.0 WATT SURMETIC 30 SILICON ZENER DIODES |
Motorola |
| 15 |
1M200ZS2 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 2% tolerance. |
Motorola |
| 16 |
1M200ZS5 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 17 |
1M200ZS5 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 5% tolerance. |
Motorola |
| 18 |
1RM200 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 19 |
20RM200 |
High Voltage silicon rectifier 20kV |
SESCOSEM |
| 20 |
2M200Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 21 |
2M20Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 22 |
2SK3004 |
External dimensions 1 ...... FM20 |
Unknow |
| 23 |
319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 24 |
319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 25 |
319SPA-X6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 26 |
489D686X016M20V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 27 |
516D105M200LL6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 28 |
516D106M200NP6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 29 |
516D107M200QT6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 30 |
516D225M200LM6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| | | |
