| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CM200TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 2 |
CM200TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 3 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 4 |
CM200TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 5 |
CM200TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 6 |
CM200TU-12H |
Six IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 7 |
CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| | | |
