No. |
Part Name |
Description |
Manufacturer |
1 |
ESM4091 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
2 |
ESM4092 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
3 |
ESM4093 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
4 |
HMPM4090-240 |
Metallised paper capacitors of MKV construction for motors |
IPRS Baneasa |
5 |
NX8567SAM409-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. FC-UPC connector. |
NEC |
6 |
NX8567SAM409-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. SC-UPC connector. |
NEC |
7 |
RM4097 |
Low-Power, High Precision Operational Amplifier |
Raytheon |
8 |
RM4097AD |
Low-Power, High Precision Operational Amplifier |
Raytheon |
9 |
RM4097AD/883B |
Low-Power, High Precision Operational Amplifier |
Raytheon |
10 |
RM4097AT |
Low-Power, High Precision Operational Amplifier |
Raytheon |
11 |
RM4097AT/883B |
Low-Power, High Precision Operational Amplifier |
Raytheon |
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