| No. |
Part Name |
Description |
Manufacturer |
| 1 |
RM60DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2 |
RM60DZ-24 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3 |
RM60DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4 |
RM60DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 5 |
RM60DZ-H |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 6 |
RM60DZ-M |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 7 |
STB20NM60D |
N-channel 600V - 0.26Y - 20A - D2PAK |
ST Microelectronics |
| 8 |
STB8NM60D |
N-CHANNEL 600V - 0.9Ohm - 8A - TO-220/D2PAK |
ST Microelectronics |
| 9 |
STF20NM60D |
N-CHANNEL 600V 0.26 OHM 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFET |
ST Microelectronics |
| 10 |
STPS20M60D |
Power Schottky rectifier |
ST Microelectronics |
| 11 |
STPS20SM60D |
Power Schottky rectifier |
ST Microelectronics |
| 12 |
STPS30M60D |
Power Schottky rectifier |
ST Microelectronics |
| 13 |
STPS30M60DJF |
High efficiency power Schottky diode |
ST Microelectronics |
| 14 |
STPS30M60DJF-TR |
High efficiency power Schottky diode |
ST Microelectronics |
| 15 |
STPS30SM60D |
Power Schottky rectifier |
ST Microelectronics |
| 16 |
STW30NM60D |
N-CHANNEL 600V - 0.125 OHM - 30A TO-247 FAST DIODE MDMESH™ MOSFET |
ST Microelectronics |
| | | |
