| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA1576UBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 2 |
2SA1576UBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 3 |
2SA1774EBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 4 |
2SA1774EBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 5 |
LTC6253-7 |
Dual 2GHz, 3.5mA Gain of 7 Stable Rail-to-Rail I/O Op Amp |
Linear Technology |
| 6 |
LTC6253HMS-7#PBF |
Dual 2GHz, 3.5mA Gain of 7 Stable Rail-to-Rail I/O Op Amp |
Linear Technology |
| 7 |
LTC6253IMS-7#PBF |
Dual 2GHz, 3.5mA Gain of 7 Stable Rail-to-Rail I/O Op Amp |
Linear Technology |
| 8 |
NB011 |
NPN 30mA general purpose transistor |
National Semiconductor |
| 9 |
NB012 |
NPN 30mA general purpose transistor |
National Semiconductor |
| 10 |
NB021 |
PNP 30mA general purpose transistor |
National Semiconductor |
| 11 |
NB022 |
PNP 30mA general purpose transistor |
National Semiconductor |
| 12 |
NB111 |
NPN 100mA general purpose transistor |
National Semiconductor |
| 13 |
NB112 |
NPN 100mA general purpose transistor |
National Semiconductor |
| 14 |
NB113 |
NPN 100mA general purpose transistor |
National Semiconductor |
| 15 |
NB121 |
PNP 100mA general purpose transistor |
National Semiconductor |
| 16 |
NB122 |
PNP 100mA general purpose transistor |
National Semiconductor |
| 17 |
NB123 |
PNP 100mA general purpose transistor |
National Semiconductor |
| 18 |
PTF10048 |
30 Watts, 2.1�2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 19 |
RMPA1901-53 |
PCS CDMA GaAs power amplifier MMIC |
Raytheon |
| 20 |
T2300A |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V. |
General Electric Solid State |
| 21 |
T2300B |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 22 |
T2300D |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. |
General Electric Solid State |
| 23 |
T2300F |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V. |
General Electric Solid State |
| 24 |
T2300M |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 600 V. |
General Electric Solid State |
| 25 |
T2300N |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V. |
General Electric Solid State |
| 26 |
T2301A |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 100 V. |
General Electric Solid State |
| 27 |
T2301B |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 28 |
T2301D |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V. |
General Electric Solid State |
| 29 |
T2301F |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 50 V. |
General Electric Solid State |
| 30 |
T2301M |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 600 V. |
General Electric Solid State |
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