No. |
Part Name |
Description |
Manufacturer |
1 |
HMMC-1002 |
DC- 50 GHz Variable Attenuator |
Agilent (Hewlett-Packard) |
2 |
IMC-1008 |
High Q/SRF Wirewound Inductor |
Vishay |
3 |
PCN10MC-100P-2.54DS |
Product Compliant to DIN41612/IEC603-2 Standard |
Hirose Electric |
4 |
PCN10MC-100S-2.54DSA |
Product Compliant to DIN41612/IEC603-2 Standard |
Hirose Electric |
5 |
UT62S12816MC-100L |
Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
6 |
UT62S12816MC-100LI |
Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
7 |
UT62S12816MC-100LL |
Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
8 |
UT62S12816MC-100LLI |
Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
9 |
UT62V25616MC-100L |
Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
10 |
UT62V25616MC-100LE |
Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
11 |
UT62V25616MC-100LI |
Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
12 |
UT62V25616MC-100LL |
Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
13 |
UT62V25616MC-100LLE |
Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
14 |
UT62V25616MC-100LLI |
Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
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