| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CM10MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2 |
CM10MD3-12H |
CI Module Single Phase Converter Three Phase Inverter 10 Amperes/600 Volts |
Powerex Power Semiconductors |
| 3 |
CM15MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 4 |
CM15MD3-12H |
CI Module Single Phase Converter Three Phase Inverter 15 Amperes/600 Volts |
Powerex Power Semiconductors |
| 5 |
CM20MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 6 |
CM20MD3-12H |
CI Module Single Phase Converter Three Phase Inverter 20 Amperes/600 Volts |
Powerex Power Semiconductors |
| 7 |
CM30MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8 |
CM30MD3-12H |
CI Module Single Phase Converter Three Phase Inverter 30 Amperes/600 Volts |
Powerex Power Semiconductors |
| 9 |
EMD3 |
Transistors > Complex Digital Transistors |
ROHM |
| 10 |
EMD38 |
PNP+NPN Digital transistor (with built-in resistors) |
ROHM |
| 11 |
EMD38T2R |
PNP+NPN Digital transistor (with built-in resistors) |
ROHM |
| 12 |
EMD3FHA |
PNP+NPN Digital transistor (Corresponds to AEC-Q101) |
ROHM |
| 13 |
EMD3FHAT2R |
PNP+NPN Digital transistor (Corresponds to AEC-Q101) |
ROHM |
| 14 |
EMD3S |
Bridge Rectifier |
Rectron Semiconductor |
| 15 |
EMD3T2R |
General purpose (dual digital transistors) |
ROHM |
| 16 |
FMD3S |
SINGLE-PHASE GLASS PASSIVATED MINI FAST RECOVERY SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.8 Ampere) |
Rectron Semiconductor |
| 17 |
IMD3A |
Transistors > Complex Digital Transistors |
ROHM |
| 18 |
IMD3AT108 |
PNP+NPN Digital transistor (with built-in resistors) |
ROHM |
| 19 |
IMD3AT110 |
General purpose (dual digital transistors) |
ROHM |
| 20 |
MAX6738XKMD3-T |
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 21 |
MAX6739XKMD3-T |
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 22 |
MAX6742XKMD3-T |
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 23 |
MAX6745XKMD3-T |
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 24 |
MAX78638+MD3/A00 |
Three-Phase Energy Measurement and Motor Diagnostics Device |
MAXIM - Dallas Semiconductor |
| 25 |
MAX78638+MD3/A00T |
Three-Phase Energy Measurement and Motor Diagnostics Device |
MAXIM - Dallas Semiconductor |
| 26 |
MAX78638+MD3EVK1# |
Three-Phase Energy Measurement and Motor Diagnostics Device |
MAXIM - Dallas Semiconductor |
| 27 |
MBR20035CT |
Diode Schottky 35V 200A 3-Pin(3+Tab) MD3CC |
New Jersey Semiconductor |
| 28 |
MBR20045CT |
Diode Schottky 45V 200A 3-Pin(3+Tab) MD3CC |
New Jersey Semiconductor |
| 29 |
MBR20050 |
Diode Schottky 80V 100A 3-Pin(3+Tab) MD3CC |
New Jersey Semiconductor |
| 30 |
MBR20050CT |
Diode Schottky 80V 100A 3-Pin(3+Tab) MD3CC |
New Jersey Semiconductor |
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