| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 2 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 3 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 4 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 5 |
BU426A |
Transistor polarity NPN Voltage Vce sat max 3 V Voltage Vceo 400 V Current Ic @ Vce sat 4 A Time fall @ Ic 0.75 ?s Current Ic av. 6 A Power Ptot 70 W Voltage Vces 900 V |
SGS Thomson Microelectronics |
| 6 |
BUF405A |
Transistor polarity NPN Voltage Vce sat max 2.8 V Voltage Vceo 450 V Current Ic @ Vce sat 2.5 A Time fall @ Ic 0.1 ?s Current Ic av. 7.5 A Power Ptot 80 W Voltage Vces 1000 V |
SGS Thomson Microelectronics |
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