No. |
Part Name |
Description |
Manufacturer |
1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
3 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
4 |
1313 |
Metallized Polyester |
Electronic Film Capacitors |
5 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
6 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
7 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
8 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
9 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
10 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
11 |
1N5221AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.4 V. Tolerance +-10%. |
Microsemi |
12 |
1N5221BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.4 V. Tolerance +-5%. |
Microsemi |
13 |
1N5221UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.4 V. |
Microsemi |
14 |
1N5222AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. Tolerance +-10%. |
Microsemi |
15 |
1N5222BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. Tolerance +-5%. |
Microsemi |
16 |
1N5222UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. |
Microsemi |
17 |
1N5223AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.7 V. Tolerance +-10%. |
Microsemi |
18 |
1N5223BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.7 V. Tolerance +-5%. |
Microsemi |
19 |
1N5223UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.7 V. |
Microsemi |
20 |
1N5224AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.8 V. Tolerance +-10%. |
Microsemi |
21 |
1N5224BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.8 V. Tolerance +-5%. |
Microsemi |
22 |
1N5224UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.8 V. |
Microsemi |
23 |
1N5225AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. Tolerance +-10%. |
Microsemi |
24 |
1N5225BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. Tolerance +-5%. |
Microsemi |
25 |
1N5225UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. |
Microsemi |
26 |
1N5226AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-10%. |
Microsemi |
27 |
1N5226BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-5%. |
Microsemi |
28 |
1N5226UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. |
Microsemi |
29 |
1N5227AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-10%. |
Microsemi |
30 |
1N5227BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-5%. |
Microsemi |
| | | |