No. |
Part Name |
Description |
Manufacturer |
1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
3 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
4 |
1313 |
Metallized Polyester |
Electronic Film Capacitors |
5 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
6 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
7 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
8 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
9 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
10 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
11 |
30CLJQ045SCS |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Metallic Lid SMD-0.5 package DLA Number 1N7064CCU3 |
International Rectifier |
12 |
AM0405-030 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
13 |
AM0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
14 |
AM0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
15 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
16 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
17 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
18 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
19 |
BFQ32C |
Gold-metallized PNP silicon RF transistor |
Philips |
20 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
21 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
22 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
23 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
24 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
25 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
26 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
27 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
28 |
CH1021 |
Metallized paper capacitor |
IPRS Baneasa |
29 |
D1001UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
30 |
D1014 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET |
etc |
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