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Datasheets for METALLI

Datasheets found :: 359
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0405-100 Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W SGS Thomson Microelectronics
2 0405-30 Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W SGS Thomson Microelectronics
3 0710-300 High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications SGS Thomson Microelectronics
4 1313 Metallized Polyester Electronic Film Capacitors
5 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
6 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
7 1511-8 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
8 1526-1 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
9 1526-8 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
10 1527-8 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
11 30CLJQ045SCS 30A 45V Hi-Rel Schottky Common Cathode Diode in a Metallic Lid SMD-0.5 package DLA Number 1N7064CCU3 International Rectifier
12 AM0405-030 Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W SGS Thomson Microelectronics
13 AM0405-100 Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W SGS Thomson Microelectronics
14 AM0710-300 High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications SGS Thomson Microelectronics
15 BFP90A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
16 BFP91A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
17 BFP96 NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
18 BFQ23C Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope Philips
19 BFQ32C Gold-metallized PNP silicon RF transistor Philips
20 BFQ51C Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A Philips
21 BFR91A NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization Philips
22 CFY25 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
23 CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
24 CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
25 CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
26 CGY31 GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) Siemens
27 CGY52 GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) Siemens
28 CH1021 Metallized paper capacitor IPRS Baneasa
29 D1001UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED SemeLAB
30 D1014 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET etc


Datasheets found :: 359
Page: | 1 | 2 | 3 | 4 | 5 |



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