| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DMGD7N45SSD |
450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 2 |
DMGD7N45SSD-13 |
450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 3 |
M38257MGDXXXGP |
RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 4 |
M6MGD137W34DKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP) |
Renesas |
| 5 |
M6MGD13TW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 6 |
M6MGD13TW34DWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 7 |
M6MGD13TW66CWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 8 |
M6MGD13TW66CWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 9 |
M6MGD13VW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 10 |
M6MGD13VW34DWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 11 |
M6MGD13VW66CWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 12 |
M6MGD13VW66CWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) |
Renesas |
| 13 |
MGD622 |
IGBT(integrated FRD) |
Sanken |
| 14 |
MGD623N |
IGBT(integrated FRD) |
Sanken |
| 15 |
MGD623S |
IGBT(integrated FRD) |
Sanken |
| 16 |
MGD633 |
IGBT(integrated FRD) |
Sanken |
| 17 |
PMGD130UN |
20 V, dual N-channel Trench MOSFET |
NXP Semiconductors |
| 18 |
PMGD175XN |
30 V, dual N-channel Trench MOSFET |
NXP Semiconductors |
| 19 |
PMGD175XNE |
30 V, Dual N-channel Trench MOSFET |
Nexperia |
| 20 |
PMGD280UN |
Dual N-channel TrenchMOS ultra low level FET |
Nexperia |
| 21 |
PMGD280UN |
Dual N-channel TrenchMOS ultra low level FET |
NXP Semiconductors |
| 22 |
PMGD280UN |
PMGD280UN; Dual N-channel uTrenchmos (tm) ultra low level FET |
Philips |
| 23 |
PMGD280UN |
PMGD280UN; Dual N-channel uTrenchmos (tm) ultra low level FET |
Philips |
| 24 |
PMGD280UN |
Dual N-channel uTrenchmos (tm) ultra low level FET |
Philips |
| 25 |
PMGD290UCEA |
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET |
Nexperia |
| 26 |
PMGD290UCEA |
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET |
NXP Semiconductors |
| 27 |
PMGD290XN |
Dual N-channel TrenchMOS extremely low level FET |
Nexperia |
| 28 |
PMGD290XN |
Dual N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 29 |
PMGD290XN |
Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 30 |
PMGD290XN |
PMGD290XN; Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| | | |
