| No. |
Part Name |
Description |
Manufacturer |
| 1 |
EMH2801 |
P-Channel Power MOSFET, -20V, -3A, 85mOhm, Single EMH8 with Schottky Diode |
ON Semiconductor |
| 2 |
LMH2832 |
Fully-Differential, Dual, 1.1 GHz Digital Variable Gain Amplifier 40-VQFN -40 to 85 |
Texas Instruments |
| 3 |
LMH2832IRHAR |
Fully-Differential, Dual, 1.1 GHz Digital Variable Gain Amplifier 40-VQFN -40 to 85 |
Texas Instruments |
| 4 |
LMH2832IRHAT |
Fully-Differential, Dual, 1.1 GHz Digital Variable Gain Amplifier 40-VQFN -40 to 85 |
Texas Instruments |
| 5 |
MH28D72KLG-10 |
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 6 |
MH28D72KLG-75 |
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 7 |
MH28S72PJG-5 |
9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 8 |
MH28S72PJG-6 |
9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 9 |
MH28S72PJG-7 |
9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| | | |
