| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AP9050 |
Protection Interface for PMICs with Integrated OVP Control |
Diodes |
| 2 |
AP9050FDB-7 |
Protection Interface for PMICs with Integrated OVP Control |
Diodes |
| 3 |
BGA416 |
Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143 |
Infineon |
| 4 |
BGA420 |
Silicon MMICs - 20dB LNA, 0...3GHz, 50Ohm, SOT343 |
Infineon |
| 5 |
BGA427 |
Silicon MMICs - 25dB LNA, 0...3GHz, 50Ohm, SOT343 |
Infineon |
| 6 |
BGA428 |
Silicon MMICs - 19dB LNA, 1.4...2.5GHz, NF=1.4dB, 50Ohm, SOT363 |
Infineon |
| 7 |
BGA430 |
Silicon MMICs - 30dB LNB Amplifier, 0.9...2.2GHz, SOT363 |
Infineon |
| 8 |
BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343 |
Infineon |
| 9 |
BGA614 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343 |
Infineon |
| 10 |
BGA616 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 18dBm, SOT343 |
Infineon |
| 11 |
BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343 |
Infineon |
| 12 |
BGB420 |
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 |
Infineon |
| 13 |
BGB540 |
Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343 |
Infineon |
| 14 |
CSEM2003D |
Capacitive sensor interface |
Xemics |
| 15 |
GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier |
Panasonic |
| 16 |
GN04022N |
GaAs device - GaAs MMICs - Switch |
Panasonic |
| 17 |
GN04042N |
GaAs device - GaAs MMICs - Switch |
Panasonic |
| 18 |
MAX1586 |
High-Efficiency / Low-IQ PMICs with Dynamic Core for PDAs and Smart Phones |
MAXIM - Dallas Semiconductor |
| 19 |
MAX1586A |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smart Phones |
MAXIM - Dallas Semiconductor |
| 20 |
MAX1586AETM |
High-Efficiency / Low-IQ PMICs with Dynamic Core for PDAs and Smart Phones |
MAXIM - Dallas Semiconductor |
| 21 |
MAX1586AETM+ |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smartphones |
MAXIM - Dallas Semiconductor |
| 22 |
MAX1586AETM+T |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smartphones |
MAXIM - Dallas Semiconductor |
| 23 |
MAX1586B |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smart Phones |
MAXIM - Dallas Semiconductor |
| 24 |
MAX1586BETM |
High-Efficiency / Low-IQ PMICs with Dynamic Core for PDAs and Smart Phones |
MAXIM - Dallas Semiconductor |
| 25 |
MAX1586BETM+ |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smartphones |
MAXIM - Dallas Semiconductor |
| 26 |
MAX1586BETM+T |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smartphones |
MAXIM - Dallas Semiconductor |
| 27 |
MAX1586BTM |
0.3-6.0V; high-efficiency, low-Iq PMICs with dynamic core for PDAs and smart phones. For PDA, palmtop and wireless handhelds, 3-generation smart cell phones, internet appliances and web-books |
MAXIM - Dallas Semiconductor |
| 28 |
MAX1586C |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smartphones |
MAXIM - Dallas Semiconductor |
| 29 |
MAX1586CETM |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smartphones |
MAXIM - Dallas Semiconductor |
| 30 |
MAX1586CETM+ |
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smartphones |
MAXIM - Dallas Semiconductor |
| | | |
