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Datasheets for MIN

Datasheets found :: 1985
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 2N2906A hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA SGS Thomson Microelectronics
2 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
3 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
4 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
5 2N918 hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W SGS Thomson Microelectronics
6 5KP100 Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. Shanghai Sunrise Electronics
7 5KP100A Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. Shanghai Sunrise Electronics
8 5KP100C Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. Shanghai Sunrise Electronics
9 5KP100CA Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. Shanghai Sunrise Electronics
10 5KP110 Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. Shanghai Sunrise Electronics
11 5KP110A Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. Shanghai Sunrise Electronics
12 5KP110C Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. Shanghai Sunrise Electronics
13 5KP110CA Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. Shanghai Sunrise Electronics
14 BC212 ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW Fairchild Semiconductor
15 BC212 ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW Fairchild Semiconductor
16 BC477 ft min 100 MHz hfe min 50 Transistor polarity PNP Current Ic continuous max 0.15 A Voltage Vcbo 90 V Voltage Vceo 80 V Current Ic (hfe) 2 mA Power Ptot 360 mW SGS Thomson Microelectronics
17 BC477 ft min 100 MHz hfe min 50 Transistor polarity PNP Current Ic continuous max 0.15 A Voltage Vcbo 90 V Voltage Vceo 80 V Current Ic (hfe) 2 mA Power Ptot 360 mW SGS Thomson Microelectronics
18 BC848A hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW Fairchild Semiconductor
19 BC848C hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW Fairchild Semiconductor
20 BC858C hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW Fairchild Semiconductor
21 BD137 hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
22 CFY30 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) Siemens
23 CZRM27C100PA 0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 1%. Comchip Technology
24 CZRM27C100PB 0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 2%. Comchip Technology
25 CZRM27C100PC 0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 5%. Comchip Technology
26 CZRM27C110PA 0.8W surface mount zener diode. Vzmin 104 V, Vzmax 116 V, 1%. Comchip Technology
27 CZRM27C110PB 0.8W surface mount zener diode. Vzmin 104 V, Vzmax 116 V, 2%. Comchip Technology
28 CZRM27C110PC 0.8W surface mount zener diode. Vzmin 104 V, Vzmax 116 V, 5%. Comchip Technology
29 CZRM27C120PA 0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 1%. Comchip Technology
30 CZRM27C120PB 0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 2%. Comchip Technology


Datasheets found :: 1985
Page: | 1 | 2 | 3 | 4 | 5 |



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