No. |
Part Name |
Description |
Manufacturer |
1 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
2 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
3 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
4 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
5 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
6 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
7 |
5KP100A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
8 |
5KP100C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
9 |
5KP100CA |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
10 |
5KP110 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
11 |
5KP110A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
12 |
5KP110C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
13 |
5KP110CA |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
14 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
15 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
16 |
BC477 |
ft min 100 MHz hfe min 50 Transistor polarity PNP Current Ic continuous max 0.15 A Voltage Vcbo 90 V Voltage Vceo 80 V Current Ic (hfe) 2 mA Power Ptot 360 mW |
SGS Thomson Microelectronics |
17 |
BC477 |
ft min 100 MHz hfe min 50 Transistor polarity PNP Current Ic continuous max 0.15 A Voltage Vcbo 90 V Voltage Vceo 80 V Current Ic (hfe) 2 mA Power Ptot 360 mW |
SGS Thomson Microelectronics |
18 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
19 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
20 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
21 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
22 |
CFY30 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
23 |
CZRM27C100PA |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 1%. |
Comchip Technology |
24 |
CZRM27C100PB |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 2%. |
Comchip Technology |
25 |
CZRM27C100PC |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 5%. |
Comchip Technology |
26 |
CZRM27C110PA |
0.8W surface mount zener diode. Vzmin 104 V, Vzmax 116 V, 1%. |
Comchip Technology |
27 |
CZRM27C110PB |
0.8W surface mount zener diode. Vzmin 104 V, Vzmax 116 V, 2%. |
Comchip Technology |
28 |
CZRM27C110PC |
0.8W surface mount zener diode. Vzmin 104 V, Vzmax 116 V, 5%. |
Comchip Technology |
29 |
CZRM27C120PA |
0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 1%. |
Comchip Technology |
30 |
CZRM27C120PB |
0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 2%. |
Comchip Technology |
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