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Datasheets for MIZ

Datasheets found :: 696
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
2 0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
3 103-1 Application Note - Flash Analog to Digital Converters Optimizing Performance Comlinear Corporation
4 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
5 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
6 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
7 163CNQ060 The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature International Rectifier
8 163CNQ080 The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature International Rectifier
9 163CNQ090 The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature International Rectifier
10 163CNQ100 The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature International Rectifier
11 1N100 Optimized for Radio Frequency Response Microsemi
12 24C01SC Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap Microchip
13 24C02SC The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria Microchip
14 2N3375 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
15 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
16 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
17 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
18 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
19 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
20 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
21 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
22 80610-18 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
23 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
24 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
25 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
26 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
27 82325-40 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
28 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
29 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
30 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics


Datasheets found :: 696
Page: | 1 | 2 | 3 | 4 | 5 |



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