No. |
Part Name |
Description |
Manufacturer |
1 |
AD7008 |
Numerically Controlled Oscillator Employing a 32-Bit Phase Accumulator, Sine and Cosine Look-Up Tables and a 10-Bit DAC, CMOS |
Analog Devices |
2 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
3 |
CXY11B |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
4 |
CXY11C |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
5 |
CXY19 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
6 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
7 |
LT311 |
solid state relay that employs optically coupled MOSFET, 1500V isolation |
Letex Technology |
8 |
SD1070 |
Silicon epitaxial NPN planar high-frequency transistor employs a multi emitter electrode design 28V 13.5W |
SGS Thomson Microelectronics |
9 |
TC125 |
The TC125/6 step-up (Boost) switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These devices employ pulse frequency modulation (PFM) for minimum supply current at l |
Microchip |
10 |
TC126 |
The TC125/6 step-up (Boost) switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These devices employ pulse frequency modulation (PFM) for minimum supply current at l |
Microchip |
11 |
UPD65301 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
12 |
UPD65301GA-XXX-9EU |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
13 |
UPD65302 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
14 |
UPD65303 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
15 |
UPD65304 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
16 |
UPD65305 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
17 |
UPD65306 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
18 |
UPD65307 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
19 |
UPD65308 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
20 |
UPD65309 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
21 |
UPD65310 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
22 |
UPD65311 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
23 |
UPD65321 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
24 |
UPD65322 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
25 |
UPD65323 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
26 |
UPD65324 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
27 |
UPD65325 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
28 |
UPD65326 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
29 |
UPD65327 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
30 |
UPD65328 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
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