| No. |
Part Name |
Description |
Manufacturer |
| 1 |
NTMS4101P |
Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8 |
ON Semiconductor |
| 2 |
NTMS4101PR2 |
Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8 |
ON Semiconductor |
| 3 |
NTMS4101PR2G |
Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8 |
ON Semiconductor |
| 4 |
NTMS4107N |
Power MOSFET 30 V, 18 A, Single N-Channel, SO-8 |
ON Semiconductor |
| 5 |
NTMS4176P |
Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 |
ON Semiconductor |
| 6 |
NTMS4177P |
Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 |
ON Semiconductor |
| 7 |
OMS410 |
100V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
International Rectifier |
| 8 |
OMS410 |
100V three terminal bridge with current and temperature sinsing |
Omnirel |
| 9 |
OMS410A |
100V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
International Rectifier |
| 10 |
OMS410A |
100V three terminal bridge with current and temperature sinsing |
Omnirel |
| 11 |
TMS4116 |
16 / 384-Bin Dynamic Random-Access Memory |
Texas Instruments |
| 12 |
TMS4161 |
GRAPHICS SYSTEM PROCESSOR |
Texas Instruments |
| 13 |
TMS416160 |
1 048 576-Word By 16-Bit High-Speed Dynamic Random-Access Memories |
Texas Instruments |
| 14 |
TMS416169 |
1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS |
Texas Instruments |
| 15 |
TMS416169P-60 |
1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS |
Texas Instruments |
| 16 |
TMS416169P-70 |
1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS |
Texas Instruments |
| 17 |
TMS416169P-80 |
1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS |
Texas Instruments |
| 18 |
TMS416400 |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
Texas Instruments |
| 19 |
TMS416400-60DJ |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
| 20 |
TMS416400-70DJ |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
| 21 |
TMS416400P |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
Texas Instruments |
| 22 |
TMS416409A |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
National Semiconductor |
| 23 |
TMS416409ADGA-50 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 50ns |
National Semiconductor |
| 24 |
TMS416409ADGA-60 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 60ns |
National Semiconductor |
| 25 |
TMS416409ADGA-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
| 26 |
TMS416409ADJ-50 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 50ns |
National Semiconductor |
| 27 |
TMS416409ADJ-60 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 60ns |
National Semiconductor |
| 28 |
TMS416409ADJ-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
| 29 |
TMS416800 |
2 097 152-Word By 8-Bit High-Speed DRAMS |
Texas Instruments |
| 30 |
TMS416809 |
2097152-WORD BY 8-BIT HIGH-SPEED DRAMS |
Texas Instruments |
| | | |
