| No. |
Part Name |
Description |
Manufacturer |
| 1 |
C505AROMTYPES |
8-Bit Microcontrollers - |
Infineon |
| 2 |
ICL8211MTY |
Programmable voltage detectors for low voltage sensor/indicator, etc |
Harris Semiconductor |
| 3 |
ICL8211MTY |
Programmable Voltage Detectors |
Intersil |
| 4 |
ICL8212MTY |
Programmable voltage detectors for low voltage sensor/indicator, etc. high output current capability |
Harris Semiconductor |
| 5 |
ICL8212MTY |
Programmable Voltage Detectors |
Intersil |
| 6 |
IR3536AMTYPBF |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
| 7 |
IR3538AMTYPBF |
Dual Loop, 7+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
| 8 |
IR3580MTYPBF |
Single Loop, 8 phase VR12 and VR12.5 Intel PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
| 9 |
IR3590MTYPBF |
Digital Multi-Phase Redundant Controller |
International Rectifier |
| 10 |
IR3595MTYPBF |
Digital Multi-Phase Redundant & GPU Controller |
International Rectifier |
| 11 |
IRMCK172MTY |
High Performance Sensorless Motor Control IC |
International Rectifier |
| 12 |
MAX8211MTY |
Microprocessor Voltage Monitors with Programmable Voltage Detection |
MAXIM - Dallas Semiconductor |
| 13 |
MAX8212MTY |
Microprocessor Voltage Monitors with Programmable Voltage Detection |
MAXIM - Dallas Semiconductor |
| 14 |
MTY100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
Motorola |
| 15 |
MTY100N10E |
Power MOSFET 100 Amps, 100 Volts |
ON Semiconductor |
| 16 |
MTY100N10E-D |
Power MOSFET 100 Amps, 100 Volts |
ON Semiconductor |
| 17 |
MTY10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 18 |
MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 19 |
MTY14N100E |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 20 |
MTY14N100E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 21 |
MTY14N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate |
ON Semiconductor |
| 22 |
MTY16N80E |
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
Motorola |
| 23 |
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 24 |
MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor |
ON Semiconductor |
| 25 |
MTY20N50E |
Power MOSFET 20 Amps, 500 Volts |
ON Semiconductor |
| 26 |
MTY20N50E-D |
Power MOSFET 20 Amps, 500 Volts |
ON Semiconductor |
| 27 |
MTY25N60E |
TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
Motorola |
| 28 |
MTY25N60E |
OBSOLETE - Power MOSFET 25 Amps, 600 Volts |
ON Semiconductor |
| 29 |
MTY25N60E-D |
Power MOSFET 25 Amps, 600 Volts |
ON Semiconductor |
| 30 |
MTY30N50 |
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
Motorola |
| | | |
