No. |
Part Name |
Description |
Manufacturer |
1 |
BMTY121AN |
βMTY121AN Ultralow offset voltage precision preamplifier |
IPRS Baneasa |
2 |
BMTY121AN |
βMTY121AN Ultralow offset voltage precision preamplifier |
IPRS Baneasa |
3 |
BMTY121N |
βMTY121N Ultralow offset voltage precision preamplifier |
IPRS Baneasa |
4 |
BMTY121N |
βMTY121N Ultralow offset voltage precision preamplifier |
IPRS Baneasa |
5 |
MTY100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
Motorola |
6 |
MTY100N10E |
Power MOSFET 100 Amps, 100 Volts |
ON Semiconductor |
7 |
MTY100N10E-D |
Power MOSFET 100 Amps, 100 Volts |
ON Semiconductor |
8 |
MTY10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
9 |
MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
10 |
MTY14N100E |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
11 |
MTY14N100E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
12 |
MTY14N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate |
ON Semiconductor |
13 |
MTY16N80E |
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
Motorola |
14 |
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
15 |
MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor |
ON Semiconductor |
16 |
SMTY18AM |
LOW FORWARD VOLTAGE TVS: Transky |
ST Microelectronics |
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