No. |
Part Name |
Description |
Manufacturer |
1 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
2 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
3 |
16C552 |
DUAL ASYCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO |
Texas Instruments |
4 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
5 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
6 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
7 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
8 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
9 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
10 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
11 |
1A212 |
High-Performance DUPLEX(Half-Duplex Communication) |
Mitel Semiconductor |
12 |
1A353 |
High-Performance Duplex(Half-Duplex Communication) |
Mitel Semiconductor |
13 |
1N4149 |
Silicon epitaxial planar diode, communication and industrial applications, ultra high speed switching |
TOSHIBA |
14 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
15 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
16 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
17 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
18 |
2322 66. 9. . . . |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
19 |
2322661 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
20 |
232266191066 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
21 |
232266193025 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
22 |
232266193037 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
23 |
232266193048 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
24 |
232266193056 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
25 |
232266193078 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
26 |
232266193118 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
27 |
232266193121 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
28 |
232266193124 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
29 |
232266193135 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
30 |
232266193139 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
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