No. |
Part Name |
Description |
Manufacturer |
1 |
AC23C16200B |
1MX16/2MX8 BIT CMOS MASK ROM |
etc |
2 |
AS4LC1M16S1 |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
Alliance Semiconductor |
3 |
AS4LC2M8S1 |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
Alliance Semiconductor |
4 |
AS4LC4M16S0 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
5 |
AS4LC4M16S0 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
6 |
AS4LC4M16S0-10FTC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
7 |
AS4LC4M16S0-10TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
8 |
AS4LC4M16S0-75TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
9 |
AS4LC4M16S0-8TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
10 |
AS4LC8M8S0 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
11 |
AS4LC8M8S0 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
12 |
AS4LC8M8S0-10FTC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
13 |
AS4LC8M8S0-10TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
14 |
AS4LC8M8S0-75TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
15 |
AS4LC8M8S0-8TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
16 |
BS616LV1611 |
Asynchronous 16M(1Mx16) bits Static RAM |
Brilliance Semiconductor |
17 |
BS616LV1613 |
Asynchronous 16M(1Mx16) bits Static RAM |
Brilliance Semiconductor |
18 |
BS616LV1615 |
Asynchronous 16M(1Mx16) bits Static RAM |
Brilliance Semiconductor |
19 |
BS616LV1622 |
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM |
Brilliance Semiconductor |
20 |
BS616LV1623 |
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM |
Brilliance Semiconductor |
21 |
BS616LV1626 |
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM |
Brilliance Semiconductor |
22 |
DPSD16MX16TY5 |
256 Megabit Synchronous DRAM |
etc |
23 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
24 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
25 |
HY27LF081G2M-TCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
26 |
HY27LF081G2M-TCP |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
27 |
HY27LF081G2M-TCS |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
28 |
HY27LF081G2M-TEB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
29 |
HY27LF081G2M-TEP |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
30 |
HY27LF081G2M-TES |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
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