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Datasheets for N 11

Datasheets found :: 86
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No. Part Name Description Manufacturer
1 2N6496 Trans GP BJT NPN 110V 15A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
2 BC848A hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW Fairchild Semiconductor
3 BD745 20A Complementary silicon 115W power NPN transistor Motorola
4 BD745A 20A Complementary silicon 115W power NPN transistor Motorola
5 BD745B 20A Complementary silicon 115W power NPN transistor Motorola
6 BD745C 20A Complementary silicon 115W power NPN transistor Motorola
7 BD746 20A Complementary silicon 115W power PNP transistor Motorola
8 BD746A 20A Complementary silicon 115W power PNP transistor Motorola
9 BD746B 20A Complementary silicon 115W power PNP transistor Motorola
10 BD746C 20A Complementary silicon 115W power PNP transistor Motorola
11 CZRM27C120PA 0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 1%. Comchip Technology
12 CZRM27C120PB 0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 2%. Comchip Technology
13 CZRM27C120PC 0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 5%. Comchip Technology
14 HFBR-0536 HFBR-0536 · Eval Kit for proprietary data com apps at data rates up to 32 MBd with AN 1121 figs. 3 & 4 circuits Agilent (Hewlett-Packard)
15 HFBR-0537 HFBR-0537 · Eval Kit for proprietary data com apps at data rates up to 32 MBd with AN 1121 figs. 3 & 5 Agilent (Hewlett-Packard)
16 HUF75333G3 Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C Fairchild Semiconductor
17 KZY85 Zener diode for stabilisation 11.0V Tesla Elektronicke
18 MAX4074BAESA Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 10V/V, noniverting gain 11V/V, -3dB BW 79kHZ. MAXIM - Dallas Semiconductor
19 MAX4074BAEUK-T Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 10/V, noniverting gain 11V/V, -3dB BW 79kHZ. MAXIM - Dallas Semiconductor
20 MAX4075BAESA Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 10V/V, noninverting gain 11V/V, -3dB BW 79kHz. MAXIM - Dallas Semiconductor
21 MAX4075BAEUA Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 10V/V, noninverting gain 11V/V, -3dB BW 79kHZ. MAXIM - Dallas Semiconductor
22 MAX4174BAEUK-T Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
23 MAX4175BAEUK-T Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
24 MAX4274BAESA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
25 MAX4274BAEUA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
26 MAX4275BAESA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
27 MAX4275BAEUA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
28 MCR154 Thyristor PNPN 110 Amperes RMS Motorola
29 MCR154-10 Thyristor PNPN 110 Amperes RMS, 100V Motorola
30 MCR154-20 Thyristor PNPN 110 Amperes RMS, 200V Motorola


Datasheets found :: 86
Page: | 1 | 2 | 3 |



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