No. |
Part Name |
Description |
Manufacturer |
1 |
2N6496 |
Trans GP BJT NPN 110V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
2 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
3 |
BD745 |
20A Complementary silicon 115W power NPN transistor |
Motorola |
4 |
BD745A |
20A Complementary silicon 115W power NPN transistor |
Motorola |
5 |
BD745B |
20A Complementary silicon 115W power NPN transistor |
Motorola |
6 |
BD745C |
20A Complementary silicon 115W power NPN transistor |
Motorola |
7 |
BD746 |
20A Complementary silicon 115W power PNP transistor |
Motorola |
8 |
BD746A |
20A Complementary silicon 115W power PNP transistor |
Motorola |
9 |
BD746B |
20A Complementary silicon 115W power PNP transistor |
Motorola |
10 |
BD746C |
20A Complementary silicon 115W power PNP transistor |
Motorola |
11 |
CZRM27C120PA |
0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 1%. |
Comchip Technology |
12 |
CZRM27C120PB |
0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 2%. |
Comchip Technology |
13 |
CZRM27C120PC |
0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 5%. |
Comchip Technology |
14 |
HFBR-0536 |
HFBR-0536 · Eval Kit for proprietary data com apps at data rates up to 32 MBd with AN 1121 figs. 3 & 4 circuits |
Agilent (Hewlett-Packard) |
15 |
HFBR-0537 |
HFBR-0537 · Eval Kit for proprietary data com apps at data rates up to 32 MBd with AN 1121 figs. 3 & 5 |
Agilent (Hewlett-Packard) |
16 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
17 |
KZY85 |
Zener diode for stabilisation 11.0V |
Tesla Elektronicke |
18 |
MAX4074BAESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 10V/V, noniverting gain 11V/V, -3dB BW 79kHZ. |
MAXIM - Dallas Semiconductor |
19 |
MAX4074BAEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 10/V, noniverting gain 11V/V, -3dB BW 79kHZ. |
MAXIM - Dallas Semiconductor |
20 |
MAX4075BAESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 10V/V, noninverting gain 11V/V, -3dB BW 79kHz. |
MAXIM - Dallas Semiconductor |
21 |
MAX4075BAEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 10V/V, noninverting gain 11V/V, -3dB BW 79kHZ. |
MAXIM - Dallas Semiconductor |
22 |
MAX4174BAEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. |
MAXIM - Dallas Semiconductor |
23 |
MAX4175BAEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. |
MAXIM - Dallas Semiconductor |
24 |
MAX4274BAESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. |
MAXIM - Dallas Semiconductor |
25 |
MAX4274BAEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. |
MAXIM - Dallas Semiconductor |
26 |
MAX4275BAESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. |
MAXIM - Dallas Semiconductor |
27 |
MAX4275BAEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. |
MAXIM - Dallas Semiconductor |
28 |
MCR154 |
Thyristor PNPN 110 Amperes RMS |
Motorola |
29 |
MCR154-10 |
Thyristor PNPN 110 Amperes RMS, 100V |
Motorola |
30 |
MCR154-20 |
Thyristor PNPN 110 Amperes RMS, 200V |
Motorola |
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