No. |
Part Name |
Description |
Manufacturer |
1 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
2 |
2N4957 |
Application Note - UHF amplifier design using data sheet design curves |
Motorola |
3 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
4 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
5 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
6 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
7 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
8 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
9 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
10 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
11 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
12 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
13 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
14 |
300 SERIES |
Highest Precision |
Vishay |
15 |
AB-002 |
MAKE A PRECISION CURRENT SOURCE OR CURRENT SINK |
Burr Brown |
16 |
AD7711 |
CMOS, 24-Bit Sigma-Delta, Signal Conditioning ADC with Matched RTD Excitation Currents |
Analog Devices |
17 |
AD7711AN |
LC2MOS Signal Conditioning ADC with RTD Excitation Currents |
Analog Devices |
18 |
AD7711AQ |
LC2MOS Signal Conditioning ADC with RTD Excitation Currents |
Analog Devices |
19 |
AD7711AR |
LC2MOS Signal Conditioning ADC with RTD Excitation Currents |
Analog Devices |
20 |
AD7711SQ |
LC2MOS Signal Conditioning ADC with RTD Excitation Currents |
Analog Devices |
21 |
AD7783BRU-REEL |
Read-Only, Pin Configured 24-Bit ADC with Excitation Current Sources |
Analog Devices |
22 |
AD7783BRU-REEL7 |
Read-Only, Pin Configured 24-Bit ADC with Excitation Current Sources |
Analog Devices |
23 |
ADA4927-1 |
Ultralow Distortion Current Feedback Differential ADC Driver |
Analog Devices |
24 |
ADA4927-2 |
Ultralow Distortion Current Feedback Differential ADC Driver |
Analog Devices |
25 |
ADN8810 |
A Programmable Precision Current Source Designed For Tunable Lasers |
Analog Devices |
26 |
ADN8810XCP |
A Programmable Precision Current Source Designed For Tunable Lasers |
Analog Devices |
27 |
ADN8810XCP-REEL7 |
A Programmable Precision Current Source Designed For Tunable Lasers |
Analog Devices |
28 |
ADS1208 |
10MHz Modulator with built in current excitation for Hall sensors |
Texas Instruments |
29 |
ADS1208IPW |
10MHz Modulator with built in current excitation for Hall sensors 16-TSSOP -40 to 85 |
Texas Instruments |
30 |
ADS1208IPWG4 |
10MHz Modulator with built in current excitation for Hall sensors 16-TSSOP -40 to 85 |
Texas Instruments |
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