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Datasheets for N CURR

Datasheets found :: 796
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
2 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
3 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
4 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
5 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
6 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
7 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
8 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
9 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
10 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
11 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
12 2N918 hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W SGS Thomson Microelectronics
13 300 SERIES Highest Precision Vishay
14 AB-002 MAKE A PRECISION CURRENT SOURCE OR CURRENT SINK Burr Brown
15 AD7711 CMOS, 24-Bit Sigma-Delta, Signal Conditioning ADC with Matched RTD Excitation Currents Analog Devices
16 AD7711AN LC2MOS Signal Conditioning ADC with RTD Excitation Currents Analog Devices
17 AD7711AQ LC2MOS Signal Conditioning ADC with RTD Excitation Currents Analog Devices
18 AD7711AR LC2MOS Signal Conditioning ADC with RTD Excitation Currents Analog Devices
19 AD7711SQ LC2MOS Signal Conditioning ADC with RTD Excitation Currents Analog Devices
20 AD7783BRU-REEL Read-Only, Pin Configured 24-Bit ADC with Excitation Current Sources Analog Devices
21 AD7783BRU-REEL7 Read-Only, Pin Configured 24-Bit ADC with Excitation Current Sources Analog Devices
22 ADA4927-1 Ultralow Distortion Current Feedback Differential ADC Driver Analog Devices
23 ADA4927-2 Ultralow Distortion Current Feedback Differential ADC Driver Analog Devices
24 ADN8810 A Programmable Precision Current Source Designed For Tunable Lasers Analog Devices
25 ADN8810XCP A Programmable Precision Current Source Designed For Tunable Lasers Analog Devices
26 ADN8810XCP-REEL7 A Programmable Precision Current Source Designed For Tunable Lasers Analog Devices
27 ADS1208 10MHz Modulator with built in current excitation for Hall sensors Texas Instruments
28 ADS1208IPW 10MHz Modulator with built in current excitation for Hall sensors 16-TSSOP -40 to 85 Texas Instruments
29 ADS1208IPWG4 10MHz Modulator with built in current excitation for Hall sensors 16-TSSOP -40 to 85 Texas Instruments
30 BC848A hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW Fairchild Semiconductor


Datasheets found :: 796
Page: | 1 | 2 | 3 | 4 | 5 |



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