No. |
Part Name |
Description |
Manufacturer |
1 |
1N5614 |
200 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
2 |
1N5616 |
400 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
3 |
1N5618 |
600 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
4 |
1N5620 |
800 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
5 |
1N5622 |
1000 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
6 |
1N5818M-13 |
Diode Schottky 30V 1A 2-Pin MELF |
New Jersey Semiconductor |
7 |
1S144 |
Silicon Alloy junction meter protection diode |
TOSHIBA |
8 |
2N1420 |
Silicon n-p-n medium power transistor |
Mullard |
9 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
10 |
2N1613 |
Silicon n-p-n medium power transistor |
Mullard |
11 |
2N1613 |
NPN medium power transistor |
Philips |
12 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
13 |
2N1711 |
Silicon n-p-n medium power transistor |
Mullard |
14 |
2N1711 |
NPN medium power transistor |
Philips |
15 |
2N1714 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
16 |
2N1715 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
17 |
2N1716 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
18 |
2N1717 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
19 |
2N1718 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
20 |
2N1719 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
21 |
2N1720 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
22 |
2N1721 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
23 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
24 |
2N1893 |
Silicon n-p-n medium power transistor |
Mullard |
25 |
2N1893 |
NPN medium power transistor |
Philips |
26 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
27 |
2N2217 |
Silicon n-p-n medium power transistor |
Mullard |
28 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
29 |
2N2218 |
Silicon NPN medium power transistor |
ICCE |
30 |
2N2218 |
Silicon n-p-n medium power transistor |
Mullard |
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