No. |
Part Name |
Description |
Manufacturer |
1 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
2 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
3 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
4 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
5 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
6 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
7 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
8 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
9 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
10 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
11 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
12 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
13 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
14 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
15 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
16 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
17 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
18 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
19 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
20 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
21 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
22 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
23 |
2SC4440 |
Very High-Definition Monochrome Display Horizontal Deflection Output Applications |
SANYO |
24 |
2SC4441 |
Very High-Definition Monocuro Display Horizontal Deflection Output Applications |
SANYO |
25 |
2SJ90 |
Silicon monolithic P channel junction dual pair transistors |
TOSHIBA |
26 |
2SK270 |
Silicon Monolithic N Channel junction transistor |
TOSHIBA |
27 |
5962-8688601EA |
High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrator |
Texas Instruments |
28 |
5962-89970012A |
Fast Settling, Wideband Low Gain Monolithic Op Amp |
National Semiconductor |
29 |
5962-89970012A |
Fast Settling, Wideband Low Gain Monolithic Op Amp |
National Semiconductor |
30 |
5962-8997001PA |
Fast Settling, Wideband Low Gain Monolithic Op Amp |
National Semiconductor |
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